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september 2009 doc id 16246 rev 1 1/12 12 STL3NK40 n-channel 400 v, 4.5 ? , 2.3 a powerflat? (5x5) supermesh? power mosfet features extremely high dv/dt capability improved esd capability 100% avalanche rated gate charge minimized very low intrinsic capacitances very good manufact uring repeatability applications switching application description the new supermesh? series of power mosfets is the result of further design improvements on st's well-established strip- based powermesh? layout. in addition to significantly lower on-resistance, the device offers superior dv/dt capabilit y to ensure optimal performance even in the most demanding applications. the supermesh? devices further complement an already broad range of innovative high voltage mosfets, which includes the revolutionary mdmesh? products. figure 1. internal schematic diagram type v dss r ds(on) max i d (1) 1. the value is rated according to rthj-f pw (1) STL3NK40 400 v < 5.5 ? 2.3 a 75 w powerflat?(5x5) table 1. device summary order code marking package packaging STL3NK40 3nk40 powerflat?(5x5) tape and reel www.st.com
contents STL3NK40 2/12 doc id 16246 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STL3NK40 electrical ratings doc id 16246 rev 1 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 400 v v dgr drain-gate voltage (r gs = 20 k ?) 400 v v gs gate- source voltage 20 v i d (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu (t < 100 s) drain current (continuous) at t c = 25 c (steady state) drain current (continuous) at t c = 100c 0.43 0.27 a a i dm (1) drain current (pulsed) 1.72 a p tot (1) total dissipation at t c = 25 c (steady state) 2.5 w p tot (2) 2. the value is rated according to rthj-f total dissipation at t c = 25 c (steady state) 75 w derating factor 0.02 w/c dv/dt (3) 3. i sd < 0.43 a, di/dt< 200 a/s, v dd < 320 v peak diode recovery voltage slope 4.5 v/ns t stg t j storage temperature max. operating junction temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit rthj-f thermal resistance junction-foot (drain) 1.66 c/w rthj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu (t < 100 s) thermal resistance junction-pcb 50 c/w table 4. avalanche data symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 0.43 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 60 mj
electrical characteristics STL3NK40 4/12 doc id 16246 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 400 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 0.8 1.6 2 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 0.22 a 4.5 5.5 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 10 v, i d = 0.43 a - 1.2 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 128 16 4 200 30 6 pf pf pf r g gate input resistance f= 1 mhz gate dc bias = 0 test signal level = 20 mv open drain -12 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 320 v, i d = 1.4 a, v gs = 10 v (see figure 10) - 8.7 0.9 3.8 13 nc nc nc
STL3NK40 electrical characteristics doc id 16246 rev 1 5/12 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 200 v, i d = 0.7 a, r g =4.7 ?, v gs = 10 v (see figure 14) - 3 4 18 16 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 0.43 1.72 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 0.43 a, v gs = 0 - 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.4 a, di/dt = 100 a/s v dd = 20 v (see figure 19) - 166 300 3.6 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.4 a, di/dt = 100 a/s v dd = 20 v, t j = 150 c (see figure 19) - 176 340 3.8 ns nc a
electrical characteristics STL3NK40 6/12 doc id 16246 rev 1 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. saturation characteristics figure 5. transfer characteristics figure 6. output characteristics figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 100m s 1 s tj=150c tc=25c s inlge p u l s e am05476v1 r d s (on) 5 4 3 2 0.1 0.5 i d (a) ( ? ) 0. 3 0.7 6 7 0.9 1.1 1. 3 am05477v1
STL3NK40 electrical characteristics doc id 16246 rev 1 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. transconductance figure 11. normalized b vdss vs temperature figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v d s = 3 20v i d =1.4a v d s = 3 20v i d =2a am0547 8 v1 c 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am05479v1
test circuits STL3NK40 8/12 doc id 16246 rev 1 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL3NK40 package mechanical data doc id 16246 rev 1 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STL3NK40 10/12 doc id 16246 rev 1 bottom view top view a e2 c b e pin1 a1 d pin1 e (hv) dim. h c n i . m m min. typ max. min. typ. max. a0. 8 00.901.000.0 3 10.0 3 50.0 3 9 2 0 0 . 0 7 0 0 0 . 0 5 0 . 0 2 0 . 0 1 a 9 0 0 . 0 4 2 . 0 3 a b 0.4 3 0.51 0.5 8 0.016 0.020 0.022 c 0.640.710.790.0250.0270.0 3 1 9 1 . 0 0 0 . 5 d 9 1 . 0 0 0 . 5 e e2 2.49 2.57 2.64 0.01 0.10 0.10 3 5 0 . 0 7 2 . 1 e powerflat ?(5x5) mech a nic a l d a t a
STL3NK40 revision history doc id 16246 rev 1 11/12 5 revision history table 9. document revision history date revision changes 18-sep-2009 1 first release
STL3NK40 12/12 doc id 16246 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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